Parameters | |
---|---|
Factory Lead Time | 1 Week |
Fall Time (Typ) | 10 ns |
Mount | Surface Mount |
Turn-Off Delay Time | 70 ns |
Mounting Type | Surface Mount |
Continuous Drain Current (ID) | 9.2A |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 600V |
Number of Pins | 3 |
Weight | 3.949996g |
Drain-source On Resistance-Max | 0.45Ohm |
Transistor Element Material | SILICON |
Drain to Source Breakdown Voltage | 600V |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Pulsed Drain Current-Max (IDM) | 26A |
Published | 2015 |
Radiation Hardening | No |
Series | CoolMOS™ E6 |
RoHS Status | RoHS Compliant |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 74W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 11 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 450m Ω @ 3.4A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 280μA |
Input Capacitance (Ciss) (Max) @ Vds | 620pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 9.2A Tc |
Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V |
Rise Time | 9ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |