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IPD60R600E6

N-Channel 600V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPD60R600E6
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 221
  • Description: N-Channel 600V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3 (Kg)

Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series CoolMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 63W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 2.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 100V
Current - Continuous Drain (Id) @ 25°C 7.3A Tc
Gate Charge (Qg) (Max) @ Vgs 20.5nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 7.3A
Drain-source On Resistance-Max 0.6Ohm
Pulsed Drain Current-Max (IDM) 19A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 133 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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