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IPD60R600P6ATMA1

MOSFET N-CH 600V 7.3A TO252


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPD60R600P6ATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 818
  • Description: MOSFET N-CH 600V 7.3A TO252 (Kg)

Details

Tags

Parameters
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 2.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 200μA
Halogen Free Not Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 557pF @ 100V
Current - Continuous Drain (Id) @ 25°C 7.3A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 7.3A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.6Ohm
Height 2.41mm
Length 6.73mm
Width 6.22mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS™ P6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 63W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
See Relate Datesheet

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