IPD65R1K4CFDBTMA1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2003 |
| Series | CoolMOS™ |
| Pbfree Code | no |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 28.4W Tc |
| Turn On Delay Time | 8 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 1.4 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 262pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 2.8A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| Rise Time | 6ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 18.2 ns |
| Turn-Off Delay Time | 33 ns |
| Continuous Drain Current (ID) | 2.8A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 650V |
| Drain to Source Breakdown Voltage | 700V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
