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IPD65R400CEAUMA1

MOSFET N-CH 650V TO-252


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPD65R400CEAUMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 888
  • Description: MOSFET N-CH 650V TO-252 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 118W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m Ω @ 3.2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 320μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 100V
Current - Continuous Drain (Id) @ 25°C 15.1A Tc
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 15.1A
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.4Ohm
Avalanche Energy Rating (Eas) 215 mJ
FET Feature Super Junction
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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