Parameters | |
---|---|
Rise Time | 8ns |
Drain to Source Voltage (Vdss) | 650V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 11 ns |
Turn-Off Delay Time | 64 ns |
Continuous Drain Current (ID) | 7.3A |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.6Ohm |
Drain to Source Breakdown Voltage | 700V |
Pulsed Drain Current-Max (IDM) | 18A |
Avalanche Energy Rating (Eas) | 142 mJ |
Height | 2.41mm |
Length | 6.73mm |
Width | 6.22mm |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2008 |
Series | CoolMOS™ E6 |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 63W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 63W |
Case Connection | DRAIN |
Turn On Delay Time | 10 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 600m Ω @ 2.1A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 210μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 7.3A Tc |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |