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IPD65R650CEAUMA1

MOSFET N-CH 650V 7A TO-252


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPD65R650CEAUMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 931
  • Description: MOSFET N-CH 650V 7A TO-252 (Kg)

Details

Tags

Parameters
Halogen Free Halogen Free
Packaging Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 100V
Published 2013
Current - Continuous Drain (Id) @ 25°C 7A Tc
Series CoolMOS™ CE
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 7A
JESD-609 Code e3
Pbfree Code yes
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.65Ohm
Pulsed Drain Current-Max (IDM) 18A
Part Status Active
Avalanche Energy Rating (Eas) 142 mJ
Moisture Sensitivity Level (MSL) 3 (168 Hours)
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 86W Tc
Factory Lead Time 1 Week
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Mount Surface Mount
Mounting Type Surface Mount
FET Type N-Channel
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Application SWITCHING
Transistor Element Material SILICON
Rds On (Max) @ Id, Vgs 650m Ω @ 2.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 210μA
Operating Temperature -40°C~150°C TJ
See Relate Datesheet

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