Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Weight | 3.949996g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2008 |
Series | CoolMOS™ C6 |
JESD-609 Code | e3 |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 37W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 37W |
Turn On Delay Time | 6.6 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 950m Ω @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 200μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 328pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 4.5A Tc |
Gate Charge (Qg) (Max) @ Vgs | 15.3nC @ 10V |
Rise Time | 5.2ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 13.6 ns |
Turn-Off Delay Time | 41 ns |
Continuous Drain Current (ID) | 4.5A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 650V |
Drain-source On Resistance-Max | 0.95Ohm |
Drain to Source Breakdown Voltage | 650V |
Avalanche Energy Rating (Eas) | 50 mJ |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead, Lead Free |