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IPD70N04S3-07

MOSFET N-CH 40V 82A TO252-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPD70N04S3-07
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 642
  • Description: MOSFET N-CH 40V 82A TO252-3 (Kg)

Details

Tags

Parameters
Power Dissipation-Max 79W Tc
Length 6.5mm
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Width 6.22mm
Power Dissipation 79W
RoHS Status RoHS Compliant
Case Connection DRAIN
Lead Free Lead Free
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6m Ω @ 70A, 10V
Vgs(th) (Max) @ Id 4V @ 50μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 82A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 82A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain Current-Max (Abs) (ID) 70A
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series OptiMOS™
JESD-609 Code e3
Drain-source On Resistance-Max 0.006Ohm
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
HTS Code 8541.29.00.95
Drain to Source Breakdown Voltage 40V
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pulsed Drain Current-Max (IDM) 280A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Avalanche Energy Rating (Eas) 145 mJ
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Height 2.3mm
See Relate Datesheet

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