banner_page

IPD70R2K0CEAUMA1

MOSFET N-CH TO252-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPD70R2K0CEAUMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 377
  • Description: MOSFET N-CH TO252-3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series CoolMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 42W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 70μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 163pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 4A
Max Dual Supply Voltage 700V
Drain-source On Resistance-Max 2Ohm
Pulsed Drain Current-Max (IDM) 6.3A
Avalanche Energy Rating (Eas) 11 mJ
FET Feature Super Junction
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good