IPD800N06NGBTMA1
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | OptiMOS™ |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 47W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 47W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 80m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 16μA |
| Input Capacitance (Ciss) (Max) @ Vds | 370pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 16A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| Rise Time | 38ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 27 ns |
| Turn-Off Delay Time | 22 ns |
| Continuous Drain Current (ID) | 16A |
| JEDEC-95 Code | TO-252AA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.08Ohm |
| Pulsed Drain Current-Max (IDM) | 64A |
| DS Breakdown Voltage-Min | 60V |
| Avalanche Energy Rating (Eas) | 43 mJ |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
