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IPD80R2K8CEATMA1

N-Channel 800 V 2.8 O 12 nC CoolMOS CE Power Transistor - DPAK


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPD80R2K8CEATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 841
  • Description: N-Channel 800 V 2.8 O 12 nC CoolMOS CE Power Transistor - DPAK (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package PG-TO252-3
Weight 3.949996g
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS™ CE
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 42W Tc
Element Configuration Single
Turn On Delay Time 25 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.8Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 120μA
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 100V
Current - Continuous Drain (Id) @ 25°C 1.9A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 1.9A
Gate to Source Voltage (Vgs) 30V
Max Dual Supply Voltage 800V
Input Capacitance 290pF
Drain to Source Resistance 2.4Ohm
Rds On Max 2.8 Ω
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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