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IPD80R600P7ATMA1

MOSFET N-CH 800V 8A TO252-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPD80R600P7ATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 483
  • Description: MOSFET N-CH 800V 8A TO252-3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series CoolMOS™ P7
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 60W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 170μA
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 500V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-252AA
Drain-source On Resistance-Max 0.6Ohm
Pulsed Drain Current-Max (IDM) 22A
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 20 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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