banner_page

IPD90N06S405ATMA2

MOSFET N-CH 60V 90A TO252-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPD90N06S405ATMA2
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 233
  • Description: MOSFET N-CH 60V 90A TO252-3 (Kg)

Details

Tags

Parameters
Vgs(th) (Max) @ Id 4V @ 60μA
Input Capacitance (Ciss) (Max) @ Vds 6500pF @ 25V
Factory Lead Time 1 Week
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V
Mount Surface Mount
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Fall Time (Typ) 8 ns
Turn-Off Delay Time 35 ns
Number of Pins 3
Continuous Drain Current (ID) 90A
Weight 3.949996g
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Transistor Element Material SILICON
RoHS Status ROHS3 Compliant
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101, OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 107W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.1m Ω @ 90A, 10V
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good