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IPD90N10S4L06ATMA1

IPD90N10S4L06ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPD90N10S4L06ATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 934
  • Description: IPD90N10S4L06ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Rise Time 6ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 90A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 100V
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series Automotive, AEC-Q101, OptiMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 136W Tc
Turn On Delay Time 8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.6m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 2.1V @ 90μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 6250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
See Relate Datesheet

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