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IPDD60R080G7XTMA1

MOSFET NCH 650V 83A PG-HDSOP-10


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPDD60R080G7XTMA1
  • Package: 10-PowerSOP Module
  • Datasheet: PDF
  • Stock: 747
  • Description: MOSFET NCH 650V 83A PG-HDSOP-10 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case 10-PowerSOP Module
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™ G7
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 174W Tc
Power Dissipation 174W
Turn On Delay Time 19 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 80m Ω @ 9.7A, 10V
Vgs(th) (Max) @ Id 4V @ 490μA
Input Capacitance (Ciss) (Max) @ Vds 1640pF @ 400V
Current - Continuous Drain (Id) @ 25°C 29A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 61 ns
Continuous Drain Current (ID) 29A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Max Junction Temperature (Tj) 150°C
Height 2.5mm
RoHS Status ROHS3 Compliant
See Relate Datesheet

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