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IPG20N10S4L35ATMA1

Trans MOSFET N-CH 100V 20A


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPG20N10S4L35ATMA1
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 676
  • Description: Trans MOSFET N-CH 100V 20A (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series Automotive, AEC-Q101, OptiMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 43W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Power Dissipation 43W
Turn On Delay Time 3 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 35m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 2.1V @ 16μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1105pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 17.4nC @ 10V
Rise Time 2ns
Fall Time (Typ) 13 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 100V
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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