Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2011 |
Series | OptiMOS™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 214W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 23 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 3.75m Ω @ 100A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 155μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 8110pF @ 40V |
Current - Continuous Drain (Id) @ 25°C | 100A Tc |
Gate Charge (Qg) (Max) @ Vgs | 117nC @ 10V |
Rise Time | 79ns |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 14 ns |
Turn-Off Delay Time | 45 ns |
Continuous Drain Current (ID) | 100A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 80V |
Pulsed Drain Current-Max (IDM) | 400A |
Avalanche Energy Rating (Eas) | 510 mJ |
Height | 9.45mm |
Length | 10.36mm |
Width | 4.52mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |