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IPI041N12N3GAKSA1

Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPI041N12N3GAKSA1
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 957
  • Description: Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.1m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 270μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 13800pF @ 60V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 211nC @ 10V
Rise Time 52ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 120V
Drain-source On Resistance-Max 0.0041Ohm
Pulsed Drain Current-Max (IDM) 480A
Avalanche Energy Rating (Eas) 900 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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