Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
Number of Pins | 3 |
Weight | 2.387001g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2008 |
Series | OptiMOS™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 300W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 300W |
Turn On Delay Time | 25 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 7.5m Ω @ 100A, 10V |
Vgs(th) (Max) @ Id | 4V @ 270μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 5470pF @ 75V |
Current - Continuous Drain (Id) @ 25°C | 100A Tc |
Gate Charge (Qg) (Max) @ Vgs | 93nC @ 10V |
Rise Time | 35ns |
Drive Voltage (Max Rds On,Min Rds On) | 8V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 14 ns |
Turn-Off Delay Time | 46 ns |
Continuous Drain Current (ID) | 100A |
Threshold Voltage | 3V |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 150V |
Drain-source On Resistance-Max | 0.0075Ohm |
Drain to Source Breakdown Voltage | 150V |
Pulsed Drain Current-Max (IDM) | 400A |
Avalanche Energy Rating (Eas) | 780 mJ |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |