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IPI076N12N3GAKSA1

MOSFET N-CH 120V 100A TO262-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPI076N12N3GAKSA1
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 545
  • Description: MOSFET N-CH 120V 100A TO262-3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 188W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 188W
Turn On Delay Time 24 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.6m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 130μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 6640pF @ 60V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 101nC @ 10V
Rise Time 50ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 120V
Drain-source On Resistance-Max 0.0076Ohm
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 230 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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