Parameters | |
---|---|
Turn On Delay Time | 9 ns |
Halogen Free | Halogen Free |
Rise Time | 2ns |
Drain to Source Voltage (Vdss) | 60V |
Polarity/Channel Type | N-CHANNEL |
Fall Time (Typ) | 8 ns |
Turn-Off Delay Time | 45 ns |
Continuous Drain Current (ID) | 45A |
JEDEC-95 Code | TO-262AA |
Gate to Source Voltage (Vgs) | 16V |
Max Dual Supply Voltage | 60V |
Drain-source On Resistance-Max | 0.0082Ohm |
Pulsed Drain Current-Max (IDM) | 180A |
Input Capacitance | 4.78nF |
Avalanche Energy Rating (Eas) | 97 mJ |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Rds On Max | 8.2 mΩ |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |
Mount | Through Hole |
Package / Case | TO-262-3 |
Number of Pins | 3 |
Published | 2009 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Last Time Buy |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Max Operating Temperature | 175°C |
Min Operating Temperature | -55°C |
Max Power Dissipation | 71W |
Terminal Position | SINGLE |
Reach Compliance Code | not_compliant |
Reference Standard | AEC-Q101 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |