IPI50N10S3L16AKSA1
| Parameters | |
|---|---|
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 28 ns |
| Continuous Drain Current (ID) | 50A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 100V |
| Drain-source On Resistance-Max | 0.0209Ohm |
| Pulsed Drain Current-Max (IDM) | 200A |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2008 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Reference Standard | AEC-Q101 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 100W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 15.7m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 60μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 4180pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 50A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 64nC @ 10V |
| Rise Time | 5ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
See Relate Datesheet
