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IPI80N03S4L03AKSA1

MOSFET N-CH 30V 80A TO262-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPI80N03S4L03AKSA1
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 505
  • Description: MOSFET N-CH 30V 80A TO262-3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2007
Series OptiMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 136W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 136W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.7m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 2.2V @ 90μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 9750pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 62 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.0027Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 260 mJ
Height 9.45mm
Length 10.36mm
Width 4.52mm
RoHS Status RoHS Compliant
See Relate Datesheet

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