Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Through Hole |
Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
Surface Mount | NO |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2007 |
Series | OptiMOS™ |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | ULTRA LOW RESISTANCE |
HTS Code | 8541.29.00.95 |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 1 |
Power Dissipation-Max | 136W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 136W |
Turn On Delay Time | 14 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 2.7m Ω @ 80A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 90μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 9750pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 80A Tc |
Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V |
Rise Time | 9ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±16V |
Fall Time (Typ) | 13 ns |
Turn-Off Delay Time | 62 ns |
Continuous Drain Current (ID) | 80A |
Gate to Source Voltage (Vgs) | 16V |
Max Dual Supply Voltage | 30V |
Drain-source On Resistance-Max | 0.0027Ohm |
Drain to Source Breakdown Voltage | 30V |
Avalanche Energy Rating (Eas) | 260 mJ |
Height | 9.45mm |
Length | 10.36mm |
Width | 4.52mm |
RoHS Status | RoHS Compliant |