Parameters | |
---|---|
Gate Charge (Qg) (Max) @ Vgs | 118nC @ 10V |
Rise Time | 13ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 26 ns |
Turn-Off Delay Time | 27 ns |
Continuous Drain Current (ID) | 90A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 40V |
Drain-source On Resistance-Max | 0.0025Ohm |
Avalanche Energy Rating (Eas) | 475 mJ |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2010 |
Series | OptiMOS™ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 150W Tc |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 23 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 2.5m Ω @ 90A, 10V |
Vgs(th) (Max) @ Id | 4V @ 95μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 9430pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 90A Tc |