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IPI90R800C3XKSA1

Trans MOSFET N-CH 900V 6.9A 3-Pin(3+Tab) TO-262


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPI90R800C3XKSA1
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 512
  • Description: Trans MOSFET N-CH 900V 6.9A 3-Pin(3+Tab) TO-262 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 104W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 70 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 800m Ω @ 4.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 460μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V
Current - Continuous Drain (Id) @ 25°C 6.9A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 400 ns
Continuous Drain Current (ID) 6.9A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 900V
Drain-source On Resistance-Max 0.8Ohm
Pulsed Drain Current-Max (IDM) 15A
Avalanche Energy Rating (Eas) 157 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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