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IPL60R199CPAUMA1

MOSFET N-CH 650V 16.4A 4VSON


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPL60R199CPAUMA1
  • Package: 4-PowerTSFN
  • Datasheet: PDF
  • Stock: 454
  • Description: MOSFET N-CH 650V 16.4A 4VSON (Kg)

Details

Tags

Parameters
Avalanche Energy Rating (Eas) 436 mJ
RoHS Status ROHS3 Compliant
Mounting Type Surface Mount
Package / Case 4-PowerTSFN
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series CoolMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 2A (4 Weeks)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code S-PSSO-N4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 139W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 199m Ω @ 9.9A, 10V
Vgs(th) (Max) @ Id 3.5V @ 660μA
Input Capacitance (Ciss) (Max) @ Vds 1520pF @ 100V
Current - Continuous Drain (Id) @ 25°C 16.4A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.199Ohm
Pulsed Drain Current-Max (IDM) 51A
DS Breakdown Voltage-Min 600V
See Relate Datesheet

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