Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 4-PowerTSFN |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2014 |
Series | CoolMOS™ P6 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 2A (4 Weeks) |
Number of Terminations | 4 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | NO LEAD |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 126W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 255m Ω @ 6.4A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 530μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 1450pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 15.9A Tc |
Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 15.9A |
Max Dual Supply Voltage | 600V |
Drain-source On Resistance-Max | 0.255Ohm |
Avalanche Energy Rating (Eas) | 352 mJ |
RoHS Status | RoHS Compliant |
Lead Free | Contains Lead |