IPL60R360P6SATMA1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Weight | 75.891673mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Series | CoolMOS™ P6 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-N5 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 89.3W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 12 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 360m Ω @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 370μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 1010pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 11.3A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
| Rise Time | 7ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 7 ns |
| Turn-Off Delay Time | 33 ns |
| Continuous Drain Current (ID) | 11.3A |
| Gate to Source Voltage (Vgs) | 30V |
| Max Dual Supply Voltage | 600V |
| Drain-source On Resistance-Max | 0.36Ohm |
| Pulsed Drain Current-Max (IDM) | 30A |
| Avalanche Energy Rating (Eas) | 247 mJ |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
See Relate Datesheet
