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IPL60R650P6SATMA1

MOSFET N-CH 600V 8THINPAK


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPL60R650P6SATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 566
  • Description: MOSFET N-CH 600V 8THINPAK (Kg)

Details

Tags

Parameters
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 56.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 650m Ω @ 2.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 200μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 557pF @ 100V
Current - Continuous Drain (Id) @ 25°C 6.7A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 6.7A
Gate to Source Voltage (Vgs) 30V
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.65Ohm
Drain to Source Breakdown Voltage 600V
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 75.891673mg
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS™ P6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
See Relate Datesheet

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