Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 4-PowerTSFN |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
Series | CoolMOS™ C7 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 2A (4 Weeks) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | NO LEAD |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 128W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 11 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 99m Ω @ 5.9A, 10V |
Vgs(th) (Max) @ Id | 4V @ 590μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 2140pF @ 400V |
Current - Continuous Drain (Id) @ 25°C | 21A Tc |
Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
Rise Time | 5ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 12 ns |
Turn-Off Delay Time | 89 ns |
Continuous Drain Current (ID) | 21A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 650V |
Drain-source On Resistance-Max | 0.099Ohm |
Pulsed Drain Current-Max (IDM) | 100A |
Avalanche Energy Rating (Eas) | 118 mJ |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |