IPN50R3K0CEATMA1
| Parameters | |
|---|---|
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3 Ω @ 400mA, 13V |
| Vgs(th) (Max) @ Id | 3.5V @ 30μA |
| Input Capacitance (Ciss) (Max) @ Vds | 84pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 4.3nC @ 10V |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On,Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 2.6A |
| Threshold Voltage | 3V |
| Drain-source On Resistance-Max | 3Ohm |
| DS Breakdown Voltage-Min | 500V |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | SOT-223-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | CoolMOS™ CE |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 5W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
See Relate Datesheet
