IPN60R1K0CEATMA1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | SOT-223-3 |
| Number of Pins | 3 |
| Supplier Device Package | PG-SOT223 |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | CoolMOS™ CE |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Channels | 1 |
| Power Dissipation-Max | 5W Tc |
| Power Dissipation | 5W |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 130μA |
| Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 6.8A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 60 ns |
| Continuous Drain Current (ID) | 6.8A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 600V |
| Max Junction Temperature (Tj) | 150°C |
| Drain to Source Resistance | 900mOhm |
| Height | 1.8mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
