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IPN60R3K4CEATMA1

MOSFET NCH 600V 2.6A SOT223


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPN60R3K4CEATMA1
  • Package: SOT-223-3
  • Datasheet: PDF
  • Stock: 939
  • Description: MOSFET NCH 600V 2.6A SOT223 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-223-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 5W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.4 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 40μA
Input Capacitance (Ciss) (Max) @ Vds 93pF @ 100V
Current - Continuous Drain (Id) @ 25°C 2.6A Tc
Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 2.6A
Threshold Voltage 3V
DS Breakdown Voltage-Min 600V
FET Feature Super Junction
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet

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