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IPN70R600P7SATMA1

MOSFET N-CH 700V 8.5A SOT223


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPN70R600P7SATMA1
  • Package: TO-261-3
  • Datasheet: PDF
  • Stock: 318
  • Description: MOSFET N-CH 700V 8.5A SOT223 (Kg)

Details

Tags

Parameters
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 6.9W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Factory Lead Time 1 Week
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 600m Ω @ 1.8A, 10V
Package / Case TO-261-3
Vgs(th) (Max) @ Id 3.5V @ 90μA
Surface Mount YES
Input Capacitance (Ciss) (Max) @ Vds 364pF @ 400V
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Current - Continuous Drain (Id) @ 25°C 8.5A Tc
Series CoolMOS™ P7
JESD-609 Code e3
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 10V
Part Status Active
Drain to Source Voltage (Vdss) 700V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) 10V
Number of Terminations 3
Vgs (Max) ±16V
ECCN Code EAR99
Drain-source On Resistance-Max 0.6Ohm
Terminal Finish Tin (Sn)
DS Breakdown Voltage-Min 700V
Technology MOSFET (Metal Oxide)
RoHS Status ROHS3 Compliant
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
See Relate Datesheet

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