banner_page

IPN70R900P7SATMA1

MOSFET N-CHANNEL 700V 6A SOT223


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPN70R900P7SATMA1
  • Package: TO-261-3
  • Datasheet: PDF
  • Stock: 810
  • Description: MOSFET N-CHANNEL 700V 6A SOT223 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case TO-261-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series CoolMOS™ P7
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 6.5W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 900m Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 60μA
Input Capacitance (Ciss) (Max) @ Vds 211pF @ 400V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 10V
Drain to Source Voltage (Vdss) 700V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±16V
Drain-source On Resistance-Max 0.9Ohm
DS Breakdown Voltage-Min 700V
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good