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IPP093N06N3GXKSA1

IPP093N06N3GXKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPP093N06N3GXKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 319
  • Description: IPP093N06N3GXKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Power Dissipation-Max 71W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 71W
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.3m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 34μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 30V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 50A
Factory Lead Time 1 Week
JEDEC-95 Code TO-220AB
Mount Through Hole
Gate to Source Voltage (Vgs) 20V
Mounting Type Through Hole
Max Dual Supply Voltage 60V
Pulsed Drain Current-Max (IDM) 200A
Package / Case TO-220-3
REACH SVHC No SVHC
Number of Pins 3
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
See Relate Datesheet

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