IPP100N04S2L03AKSA1
| Parameters | |
|---|---|
| Package / Case | TO-220-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Series | OptiMOS™ |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 1 |
| Power Dissipation-Max | 300W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 300W |
| Turn On Delay Time | 19 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 3.3m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 6000pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 230nC @ 10V |
| Rise Time | 51ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 27 ns |
| Turn-Off Delay Time | 77 ns |
| Continuous Drain Current (ID) | 100A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 40V |
| Drain to Source Breakdown Voltage | 40V |
| Pulsed Drain Current-Max (IDM) | 400A |
| Avalanche Energy Rating (Eas) | 810 mJ |
| Height | 15.95mm |
| Length | 10.36mm |
| Width | 4.57mm |
| RoHS Status | RoHS Compliant |
| Mounting Type | Through Hole |
See Relate Datesheet
