IPP100N08N3GXKSA1
| Parameters | |
|---|---|
| Rds On (Max) @ Id, Vgs | 10m Ω @ 46A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 46μA |
| Halogen Free | Halogen Free |
| Factory Lead Time | 1 Week |
| Input Capacitance (Ciss) (Max) @ Vds | 2410pF @ 40V |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Current - Continuous Drain (Id) @ 25°C | 70A Tc |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| Published | 2006 |
| Series | OptiMOS™ |
| Rise Time | 46ns |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Vgs (Max) | ±20V |
| Terminal Finish | Tin (Sn) |
| Fall Time (Typ) | 5 ns |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Turn-Off Delay Time | 22 ns |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Continuous Drain Current (ID) | 70A |
| Pin Count | 3 |
| JEDEC-95 Code | TO-220AB |
| Qualification Status | Not Qualified |
| Gate to Source Voltage (Vgs) | 20V |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 100W Tc |
| Max Dual Supply Voltage | 80V |
| Operating Mode | ENHANCEMENT MODE |
| Pulsed Drain Current-Max (IDM) | 280A |
| Power Dissipation | 100W |
| Turn On Delay Time | 14 ns |
| Avalanche Energy Rating (Eas) | 90 mJ |
| FET Type | N-Channel |
| RoHS Status | ROHS3 Compliant |
| Transistor Application | SWITCHING |
| Lead Free | Lead Free |
See Relate Datesheet
