IPP120N06S4H1AKSA2
| Parameters | |
|---|---|
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 60 ns |
| Continuous Drain Current (ID) | 120A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 60V |
| Drain-source On Resistance-Max | 0.0024Ohm |
| Pulsed Drain Current-Max (IDM) | 480A |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 6.000006g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2009 |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 250W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 30 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 2.4m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 200μA |
| Input Capacitance (Ciss) (Max) @ Vds | 21900pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 120A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 270nC @ 10V |
| Rise Time | 5ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
See Relate Datesheet
