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IPP120P04P404AKSA1

Trans MOSFET P-CH 40V 120A 3-Pin(3+Tab) TO-220


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPP120P04P404AKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 681
  • Description: Trans MOSFET P-CH 40V 120A 3-Pin(3+Tab) TO-220 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Series Automotive, AEC-Q101, OptiMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 136W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 30 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 3.8m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 340μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 14790pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 205nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 52 ns
Turn-Off Delay Time 49 ns
Continuous Drain Current (ID) 120A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -40V
Pulsed Drain Current-Max (IDM) 480A
Avalanche Energy Rating (Eas) 78 mJ
Height 15.95mm
Length 10.36mm
Width 4.57mm
RoHS Status RoHS Compliant
Lead Free Contains Lead
See Relate Datesheet

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