Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2011 |
Series | Automotive, AEC-Q101, OptiMOS™ |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 1 |
Power Dissipation-Max | 136W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 30 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 3.8m Ω @ 100A, 10V |
Vgs(th) (Max) @ Id | 4V @ 340μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 14790pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 120A Tc |
Gate Charge (Qg) (Max) @ Vgs | 205nC @ 10V |
Rise Time | 20ns |
Drain to Source Voltage (Vdss) | 40V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 52 ns |
Turn-Off Delay Time | 49 ns |
Continuous Drain Current (ID) | 120A |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | -40V |
Pulsed Drain Current-Max (IDM) | 480A |
Avalanche Energy Rating (Eas) | 78 mJ |
Height | 15.95mm |
Length | 10.36mm |
Width | 4.57mm |
RoHS Status | RoHS Compliant |
Lead Free | Contains Lead |