banner_page

IPP220N25NFDAKSA1

MOSFET N-CH 250V 61A TO220


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPP220N25NFDAKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 270
  • Description: MOSFET N-CH 250V 61A TO220 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2012
Series OptiMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 22m Ω @ 61A, 10V
Vgs(th) (Max) @ Id 4V @ 270μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 7076pF @ 125V
Current - Continuous Drain (Id) @ 25°C 61A Tc
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 61A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 250V
Drain-source On Resistance-Max 0.022Ohm
Pulsed Drain Current-Max (IDM) 244A
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good