IPP410N30NAKSA1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | OptiMOS™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 300W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 300W |
| Case Connection | DRAIN |
| Turn On Delay Time | 16 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 41m Ω @ 44A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 270μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 7180pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 44A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 87nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 43 ns |
| Continuous Drain Current (ID) | 44A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 300V |
| Drain to Source Breakdown Voltage | 300V |
| Avalanche Energy Rating (Eas) | 240 mJ |
| Max Junction Temperature (Tj) | 175°C |
| Height | 20.7mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
See Relate Datesheet
