Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2006 |
Series | OptiMOS™ |
Part Status | Discontinued |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 71W Tc |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 15 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 9.4m Ω @ 45A, 10V |
Vgs(th) (Max) @ Id | 4V @ 34μA |
Input Capacitance (Ciss) (Max) @ Vds | 3785pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 45A Tc |
Gate Charge (Qg) (Max) @ Vgs | 47nC @ 10V |
Rise Time | 40ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 5 ns |
Turn-Off Delay Time | 20 ns |
Continuous Drain Current (ID) | 45A |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 60V |
Drain-source On Resistance-Max | 0.0094Ohm |
Pulsed Drain Current-Max (IDM) | 180A |
Avalanche Energy Rating (Eas) | 97 mJ |
RoHS Status | ROHS3 Compliant |