banner_page

IPP50R190CEXKSA1

MOSFET N-CH 500V 18.5A PG-TO-220


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPP50R190CEXKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 235
  • Description: MOSFET N-CH 500V 18.5A PG-TO-220 (Kg)

Details

Tags

Parameters
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Power Dissipation-Max 127W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 127W
Turn On Delay Time 9.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 6.2A, 13V
Vgs(th) (Max) @ Id 3.5V @ 510μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1137pF @ 100V
Current - Continuous Drain (Id) @ 25°C 18.5A Tc
Gate Charge (Qg) (Max) @ Vgs 47.2nC @ 10V
Rise Time 8.5ns
Drive Voltage (Max Rds On,Min Rds On) 13V
Vgs (Max) ±20V
Fall Time (Typ) 7.5 ns
Turn-Off Delay Time 54 ns
Continuous Drain Current (ID) 18.5A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 500V
Drain-source On Resistance-Max 0.19Ohm
Drain to Source Breakdown Voltage 550V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™ CE
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good