Parameters | |
---|---|
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 127W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 127W |
Turn On Delay Time | 9.5 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 190m Ω @ 6.2A, 13V |
Vgs(th) (Max) @ Id | 3.5V @ 510μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 1137pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 18.5A Tc |
Gate Charge (Qg) (Max) @ Vgs | 47.2nC @ 10V |
Rise Time | 8.5ns |
Drive Voltage (Max Rds On,Min Rds On) | 13V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 7.5 ns |
Turn-Off Delay Time | 54 ns |
Continuous Drain Current (ID) | 18.5A |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 500V |
Drain-source On Resistance-Max | 0.19Ohm |
Drain to Source Breakdown Voltage | 550V |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2008 |
Series | CoolMOS™ CE |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |