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IPP60R074C6XKSA1

Trans MOSFET N-CH 650V 57.7A 3-Pin(3+Tab) TO-220


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPP60R074C6XKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 562
  • Description: Trans MOSFET N-CH 650V 57.7A 3-Pin(3+Tab) TO-220 (Kg)

Details

Tags

Parameters
Power Dissipation-Max 480.8W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 74m Ω @ 21A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.4mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3020pF @ 100V
Current - Continuous Drain (Id) @ 25°C 57.7A Tc
Gate Charge (Qg) (Max) @ Vgs 138nC @ 10V
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 56 ns
Continuous Drain Current (ID) 57.7A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.074Ohm
Avalanche Energy Rating (Eas) 923 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
See Relate Datesheet

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