IPP60R190E6
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Package / Case | TO-220-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Published | 2008 |
| Pbfree Code | yes |
| Part Status | Active |
| Number of Terminations | 3 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Subcategory | FET General Purpose Power |
| Terminal Position | SINGLE |
| Terminal Form | THROUGH-HOLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 151W |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 151W |
| Turn On Delay Time | 12 ns |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Rise Time | 10ns |
| Drain to Source Voltage (Vdss) | 600V |
| Polarity/Channel Type | N-CHANNEL |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 90 ns |
| Continuous Drain Current (ID) | 20.2A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 650V |
| Pulsed Drain Current-Max (IDM) | 59A |
| Avalanche Energy Rating (Eas) | 418 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance | 170mOhm |
| Rds On Max | 190 mΩ |
| Capacitance - Input | 1.4nF |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
