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IPP60R1K4C6XKSA1

MOSFET N-Ch 650V 3.2A TO220-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPP60R1K4C6XKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 145
  • Description: MOSFET N-Ch 650V 3.2A TO220-3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 28.4W Tc
Element Configuration Single
Turn On Delay Time 8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4 Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 100V
Current - Continuous Drain (Id) @ 25°C 3.2A Tc
Gate Charge (Qg) (Max) @ Vgs 1.1nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 3.2A
Gate to Source Voltage (Vgs) 30V
Max Dual Supply Voltage 600V
Drain to Source Breakdown Voltage 650V
Height 15.95mm
Length 10.36mm
Width 4.57mm
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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