IPP60R1K4C6XKSA1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2008 |
| Series | CoolMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Power Dissipation-Max | 28.4W Tc |
| Element Configuration | Single |
| Turn On Delay Time | 8 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 1.4 Ω @ 1.1A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 90μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 1.1nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 40 ns |
| Continuous Drain Current (ID) | 3.2A |
| Gate to Source Voltage (Vgs) | 30V |
| Max Dual Supply Voltage | 600V |
| Drain to Source Breakdown Voltage | 650V |
| Height | 15.95mm |
| Length | 10.36mm |
| Width | 4.57mm |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
