Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2014 |
Series | CoolMOS™ CFD7 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 52W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 280m Ω @ 3.6A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 180μA |
Input Capacitance (Ciss) (Max) @ Vds | 807pF @ 400V |
Current - Continuous Drain (Id) @ 25°C | 9A Tc |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
Drain to Source Voltage (Vdss) | 650V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
JEDEC-95 Code | TO-220AB |
Drain Current-Max (Abs) (ID) | 9A |
Drain-source On Resistance-Max | 0.28Ohm |
Pulsed Drain Current-Max (IDM) | 31A |
DS Breakdown Voltage-Min | 600V |
Avalanche Energy Rating (Eas) | 36 mJ |
RoHS Status | ROHS3 Compliant |