banner_page

IPP60R330P6XKSA1

MOSFET N-CH 600V 12A TO220-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPP60R330P6XKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 605
  • Description: MOSFET N-CH 600V 12A TO220-3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package PG-TO220-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™ P6
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 93W Tc
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 330mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 370μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 100V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 7ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Input Capacitance 1.01nF
Drain to Source Resistance 297mOhm
Rds On Max 330 mΩ
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good